maximum ratings: (t a =25c) symbol d40k1, 3 D40K2, 4 units collector-emitter voltage v ceo 30 50 v collector-emitter voltage v ces 30 50 v emitter-base voltage v ebo 13 v continuous collector current i c 2.0 a peak collector current i cm 3.0 a base current i b 0.2 a power dissipation p d 1.67 w power dissipation (t c =25c) p d 10 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 75 c/w thermal resistance jc 12.5 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i ces v ce =rated v ce 500 na i ebo v eb =13v 100 na bv ceo i c =10ma (d40k1, 3) 30 v bv ceo i c =10ma (D40K2, 4) 50 v v ce(sat) i c =1.5a, i b =3.0ma (d40k1, 2) 1.5 v v ce(sat) i c =1.0a, i b =2.0ma (d40k3, 4) 1.5 v v be(sat) i c =1.5a, i b =3.0ma (d40k1, 2) 2.5 v v be(sat) i c =1.0a, i b =2.0ma (d40k3, 4) 2.5 v h fe v ce =5.0v, i c =200ma 10k h fe v ce =5.0v, i c =1.5a (d40k1, 2) 1k h fe v ce =5.0v, i c =1.0a (d40k3, 4) 1k c cb v cb =10v, f=1.0mhz 10 pf f t v ce =5.0v, i c =20ma 75 mhz d40k series npn silicon darlington power transistor to-202 case central semiconductor corp. tm r0 (28-march 2008) description: the central semiconductor d40k series types are npn silicon darlington power transistors designed for general purpose amplifier applications where high gain is required. marking: full part number
central semiconductor corp. tm to-202 case - mechanical outline d40k series npn silicon darlington power transistor r0 (28-march 2008) lead code: 1) emitter 2) base 3) collector note: tab is common to lead 3. marking: full part number
|
